Chemical Etching and TEM Crystalline Quality Assessment of Single Crystalline ZnSe Ingots Grown by I2 Vapor Phase Transport

R. D'ELÍA; M. AGUIRRE; E. HEREDIA; M.C. DI STEFANO; A.M. MARTÍNEZ; A. TOLLEY; J. NUÑEZ GARCÍA; A. GERACI; E. CABANILLAS; H. CÁNEPA; A.B. TRIGUBÓ

International Journal of Advanced Applied Physics Research

Cosmos Scholars Publishing House

Lugar: Karachi; Año: 2015 vol. 2 p. 28 - 34

Crystalline defects were studied in single crystalline ZnSe grown by chemical transport using I2 as gaseous carrier. Transmission electronic microscopy determined an excellent structural order in the micrometric and nanometricrange. Larger material areas were studied by chemical etching using different reagents to determine average dislocations density and average adjacent subgrains misorientation. Comparable micrographic results of differentreagents are shown. Characterization values of ZnSe commercial substrate grown by High Pressure Bridgman (HPB) have been compared to those that correspond to our grown material wafers. Characterization proved that thesemiconductor crystalline quality in our wafers is appropriate for optical devices.