Competitive growth model involving random deposition and random deposition with surface relaxation

HOROWITZ CLAUDIO; MONETTI ROBERTO; ALBANO EZEQUIEL

PHYSICAL REVIEW E - STATISTICAL PHYSICS, PLASMAS, FLUIDS AND RELATED INTERDISCIPLINARY TOPICS

The American Physical Society

Año: 2001 vol. 63 p. 661321 - 661326

1063-651X

A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability “p” (“1 - p”), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling anzats for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three new exponents, that can be linked to the standard growth exponent of random deposition with surface relaxation by means of a novel scaling  relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a p-dependent effective surface tension.