Transmission electron microscopy investigation of the microstructure and chemistry of Si/Cu/In/Cu/Si interconnections

8. SOMMADOSSI S., LITYNSKA L., ZIEBA P., GUST W., MITTEMEIJER E.J.

MATERIALS CHEMISTRY AND PHYSICS

Año: 2003 vol. 81 p. 566 - 568

0254-0584

Si/Si interconnections, obtained using a Cu metallization and an In interlayer and joined by diffusion soldering are presented. The Si/Cu/In/Cu/Si bonds were accomplished due to isothermal solidification and subsequent interdiffusion of In and Cu in the samples held at 180 .C. Application of a transmission electron microscope (TEM) with an attachment for high-resolution chemical analysis allowed characterizing the microstructural and microchemical feature of the intermetallics formed in the joint. Appearance of two phases, namely.C. Application of a transmission electron microscope (TEM) with an attachment for high-resolution chemical analysis allowed characterizing the microstructural and microchemical feature of the intermetallics formed in the joint. Appearance of two phases, namely
(Cu2In) and (Cu7In3), was confirmed by electron diffraction patterns and energy-dispersive X-ray (EDX) analysis. The bond quality and the high melting point of the phases (.630 .C) indicate a great potential of this technique for joining of integrated circuits in electronics.(Cu2In) and (Cu7In3), was confirmed by electron diffraction patterns and energy-dispersive X-ray (EDX) analysis. The bond quality and the high melting point of the phases (.630 .C) indicate a great potential of this technique for joining of integrated circuits in electronics..630 .C) indicate a great potential of this technique for joining of integrated circuits in electronics.