INVESTIGADORES
RENTERIA Mario
artículos
Título:
Impurity Cationic-Site Population and Electric-Field Gradient Dependence on Ionic Size in Bixbyite Sesquioxides Implanted with 181Hf -->181Ta
Autor/es:
M. RENTERÍA; A.G. BIBILONI; F.G. REQUEJO; A.F. PASQUEVICH; J. SHITU; K. FREITAG
Revista:
MODERN PHYSICS LETTERS B
Editorial:
WORLD SCIENTIFIC PUBL CO PTE LTD
Referencias:
Lugar: London, UK; Año: 1998 vol. 12 p. 819 - 827
ISSN:
0217-9849
Resumen:
The Perturbed-Angular-Correlation technique was used to study
the impurity cationic-site population and electric-field gradients in
scandium and samarium sesquioxides implanted with 181Hf → 181Ta.
We found a departure of the tantalum (hafnium) relative occupancy of
the crystallographic sites C and D in the bixbyite structure from the
natural abundance of the sites, in the case of scandium sesquioxide,
that could be explained in terms of the small lattice parameter of this
sesquioxide. A similar behavior occurs in the case of indium
sesquioxide. In the rest of the bixbyites measured with 181Ta, fD/fC remains nearly constant and close to the crystallographic abundance, which is only reached in the case of Sm2O3, the sesquioxide with the largest lattice parameter. Additionally, we confirm a jump in the values of νQ(Ta)
for sites C and D that takes place for a ≤ 1:012 nm, that is for
lattice parameters smaller than that of ytterbium sesquioxide.