Temperature and Stress Field Calculation in Indium Phosphide During LEC Growth.

C. E. SCHVEZOV; I. V. SAMARASEKERA; F. WEINBERG

JOURNAL OF CRYSTAL GROWTH

Published by Elsevier Science Publishers B.V. (North Holland Physics Publishing Division)

Lugar: Sara Burgerhartstraat 25. 1055 KV Amsterdam. Netherlands.; Año: 1989 vol. 97 p. 146 - 151

0022-0248

he temperature fields in InP during LEC growth have been determined by finite element calculations. Xperimental measurements were used to establish the boundary conditions at the crystal gas interface, and the model employed to calculate the temperatures in the centre of the crystal. From the temperature distribution the local thermal strains and the resolved shear stress values were detemined for <100> and <111> crystal growth. As a result of the rapid increase in criticl resolved shear stress of InP with decreasing temperature, the excess stress above the CRSS drops to zero in the upper section of the growing crystal. The maximum resolved shear stress occurs above the boron oxide for a plan solid/liquid interface and is approximately 70% higher for <100> grown crystals, when compared to <111>. The excess shear stress is larger for convex interface shapes, compared to planar. The excess stress is reduced to zero over the bulk of InP crystals heavily doped with Ge.