INVESTIGADORES
LLOIS Ana Maria
artículos
Título:
Tunneling magnetoresistance of Fe/ZnSe (0 0 1) single- and
Autor/es:
JERÓNIMO PERALTA RAMOS; ANA MARÍA LLOIS
Revista:
PHYSICA B - CONDENSED MATTER
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Año: 2007 vol. 398 p. 393 - 396
ISSN:
0921-4526
Resumen:
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (0 0 1) simple and
double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of
the junctions is modeled by a second-nearest neighbors spd tight-binding Hamiltonian parametrized to ab initio calculated band
structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer?s formalism. The calculations are
done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent
transport through simple and double tunnel junctions