Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

A. SCHULMAN; C. ACHA

PHYSICA B - CONDENSED MATTER

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 2011

0921-4526

In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7 ¡ ± (YBCO) interfaces using metals with di®erent oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting ¯laments, which modify the resistance near the interface, in accordance with the predictions of a recent model. with di®erent oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting ¯laments, which modify the resistance near the interface, in accordance with the predictions of a recent model. 2Cu3O7 ¡ ± (YBCO) interfaces using metals with di®erent oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting ¯laments, which modify the resistance near the interface, in accordance with the predictions of a recent model.