Impact of nitrogen impurities on the tungsten properties for application in spintronic

J. GOMEZ; N. HABERKORN

APPLIED PHYSICS. A - MATERIALS SCIENCE AND PROCESSING

SPRINGER

Lugar: Berlin; Año: 2023 vol. 129 p. 409 - 413

0947-8396

We report the impact of the tungsten crystal structure on the spin transport properties of permalloy/tungsten bilayers grown by sputtering on (100) silicon. The microstructure of the tungsten layer was modified using a reactive N2/argon mixture during the fabrication process. The analysis combines ferromagnetic resonance and inverse spin Hall effect (ISHE) experiments. A correlation with the electrical and structural characterization indicates that an initial β−W stabilization notably improves the measured ISHE signal. Nevertheless a subsequent increment of the N2 pressure degrades the signal probably because of the amount of disorder generated in the microstructure. The interplay between the resistivity and disorder gives an optimal growth condition to enhance the tungsten spin current sensing property.