Nanopatterning with interferometric lithography using a compact λ = 46.9-nm laser

CAPELUTO, MARIA G.; VASCHENKO, GEORGIY; GRISHAM, MICHAEL; MARCONI, MARIO C.; LUDUEÑA, S.; PIETRASANTA, L.; LU, YUNFENG; PARKINSON, BRUCE; MENONI, CARMEN S.; ROCCA, J.J.

IEEE TRANSACTIONS ON NANOTECHNOLOGY

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2006 vol. 5 p. 3 - 6

1536-125X

We report the imprinting of nanometer-scale gratings by interferometric lithography at λ = 46.9 nm using an Ne-like Ar capillary discharge laser. Gratings with periods as small as 55 nm were imprinted on poly-methyl methacrylate using a Lloyd´s mirror interferometer. This first demonstration of nanopatterning using an extreme ultraviolet (EUV) laser illustrates the potential of compact EUV lasers in nanotechnology applications. © 2006 IEEE.