INVESTIGADORES
TROIANI Horacio Esteban
artículos
Título:
Growth and thermal annealing of Cu on HfO2
Autor/es:
PARK; SUN; TROIANI; SANTIAGO; YACAMAN; WHITE
Revista:
SURFACE SCIENCE
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Lugar: Amsterdam; Año: 2002 p. 1 - 9
ISSN:
0039-6028
Resumen:
The interface between Cu and HfO2 synthesized using physical vapor deposition at 300 K has been examined within situ low-energy ion scattering (LEIS), in situ X-ray photoelectron spectroscopy (XPS) and ex situ scanning transmissionelectron microscopy (STEM). Cu deposited on HfO2 at 300 K readily forms three-dimensional clusters. LEISand XPS data show that the Cu is not oxidized at the Cu?HfO2 interface. A proposed model allows simulation of thecoverage of Cu as a function of Cu dosing time before and after thermal annealing. At 300 K, the model fits the datawhen two-dimensional islands cover no more than 90% of the HfO2 surface. After thermal annealing at 673 K for 10min under vacuum (1 108 Torr), large Cu clusters are formed from smaller ones, but there is no evident diffusion intothe HfO2. For this annealed sample, STEM shows a narrow cluster diameter distribution (10?12 nm). Strain fields at thehafnia?copper interface may help limit the cluster size distribution.
