Simultaneous electric and magnetic field induced non-volatile memory

M.QUINTERO; A.G.LEYVA; PABLO EDUARDO LEVY

Applied Physics Letters

American Institute of Physics

Año: 2005 vol. 86 p. 24210 - 24210

0003-6951

Simultaneous electric and magnetic field induced nonvolatile memory, M. Quintero, A. G. Leyva, and P. Levy Departamento de Física, Centro Atómico Constituyentes, CNEA, Av.Gral Paz 1499 (1650) San Martín,Prov. de Buenos Aires, Argentina Received 7 January 2005; accepted 10 May 2005; published online 6 June 2005 APPLIED PHYSICS LETTERS 86, 242102 (2005) We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect spresumably related to the presence of inhomogeinitiesd is present in a broad temperature range s300–20 Kd, being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously. © 2005 American Institute of Physics. DOI: 10.1063/1.1948535