Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

P. STOLIAR, P. LEVY, M. J. S´ANCHEZ, G. LEYVA, C. A. ALBORNOZ, F. GOMEZ-MARLASCA, A. ZANINI, C. TORO SALAZAR, N.GHENZI, AND M. J. ROZENBERG

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING

IEEE

Año: 2014 vol. 61 p. 21 - 25

1057-7130

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs. Index Terms?Multilevel cell, Resistive switching, Non-volatile memory, ReRAM .