Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol

N. GHENZI,1 M. J. SA´NCHEZ,2 M. J. ROZENBERG,3,4 P. STOLIAR,1,5 F. G. MARLASCA,1 D. RUBI,1,5 AND P. LEVY

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Lugar: New York; Año: 2012 vol. 111 p. 84512 - 84512

0021-8979

We explore different resistance states of La0:325Pr0:300Ca0:375MnO3 Ti interfaces as prototypes of non-volatile memory devices at room temperature. In addition to high and low resistance states accessible through bipolar pulsing with one pulse, higher resistance states can be obtained by repeatedly pulsing with a single polarity. The accumulative action of successive pulsing drives the resistance towards saturation, the time constant being a strong function of the pulsing amplitude. The experiments reveal that the pulsing amplitude and the number of applied pulses necessary to reach a target high resistance value appear to be in an exponential relationship, with a rate that results independent of the resistance value. Model simulations confirm these results and provide the oxygen vacancy profiles associated to the high resistance states obtained in the experiments. VC 2012American Institute of Physics. [http://dx.doi.org/10.1063/1.4705283]