Anisotropic magnetoresistance in manganites: experiment and theory

J. D. FUHR; M. GRANADA; L. B. STEREN; B. ALASCIO

JOURNAL OF PHYSICS CONDENSED MATTER

IOP Publishing

Año: 2010 p. 146001 - 146001

0953-8984

We present measurements of the anisotropic magnetoresistance (AMR) of La0.75Sr0.25MnO3 films deposited on (001) SrTiO3 substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin–orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10-3 for the current I parallel to the [100] axis of the crystal and vanishing AMR for I // [110], in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.