INVESTIGADORES
SCHIPANI federico
artículos
Título:
Inadequacy of the Mott?Schottky equation in strongly pinned double Schottky barriers with no deep donors
Autor/es:
F. SCHIPANI; C. M. ALDAO; M. A. PONCE
Revista:
JOURNAL OF PHYSICS - D (APPLIED PHYSICS)
Editorial:
IOP PUBLISHING LTD
Referencias:
Año: 2012 vol. 45 p. 495302 - 495306
ISSN:
0022-3727
Resumen:
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline
semiconductor was evaluated. We found that the widely applied version of the Mott?Schottky
equation can lead to significant errors. Even though we considered strong Fermi level pinning
at the interface and no deep levels, the Mott?Schottky equation can be inadequate leading to
huge errors due to voltage splitting at double Schottky barriers. Experiments carried out on
ZnO varistors corroborated the main trends of our analysis.