Morphology phase diagram of a model for diffusion and growth of silicon on Si(100)-(2 × 1)

J. L. IGUAIN; C. M. ALDAO; H. O. MÁRTIN

SURFACE SCIENCE

ELSEVIER SCIENCE BV

Lugar: Amsterdam; Año: 1997 vol. 374 p. 259 - 268

0039-6028

A model for deposition, diffusion and growth of silicon on a Si(100)-(2 × 1) surface in the temperature range 350?500 K, presented in a recent paper, is analysed. In this model, different microprocesses (such as anisotropic diffusion, formation and breaking of dimer chains) take place. For a given silicon coverage, we separate the temperature-flux plane in phases according to the relevance of each microprocess, obtaining well differentiated overlayer structures that characterise each phase. Furthermore, in some zones of this morphology phase diagram we find lines for which the overlayer has the same structure.