Influence of disorder on the electronic properties of the Si(111) surface

D.E. RODRIGUES; J.F. WEISZ

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

American Physical Society

Año: 1987 vol. 35 p. 5744 - 5748

0163-1829

The influence of disorder on the local density of states of the Si(111)-(1×1) surface is studied using a tight-binding Hamiltonian with interaction up to second-nearest neighbors and diagonal disorder in the single-site energies. The calculation is performed self-consistently so as to include the effects of charge transfer at the surface. For increasing disorder one observes an energy shift in the position of the surface states towards lower energy, with respect to the Fermi level and also there is an increase in the work function of the material. The surface with interlayer contractions is discussed.