INVESTIGADORES
RODRIGUES Daniel Enrique
artículos
Título:
Effects of dihedral-angle disorder on the density of states of a-Si and a-Ge
Autor/es:
D.E. RODRIGUES; J.F. WEISZ
Revista:
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS
Editorial:
American Physical Society
Referencias:
Año: 1987 vol. 36 p. 6685 - 6687
ISSN:
0163-1829
Resumen:
The density of states is calculated for a tight-binding model of amorphous Si and Ge which includes the effects of dihedral-angle disorder. The hopping parameters are calculated using the crystalline values. Though the model and the approximations made to solve it are very simple, the results agree with various features observed in photoemission experiments.
