On the Ink Jetting of Full Front Ag Gridlines for Cost-Effective Metallization of Si Solar Cells

EBONG, A.; COOPER, I.B.; ROUNSAVILLE, B.; ROHATGI, A.; DOVRAT, M.; KRITCHMAN, E.; BRUSILOVSKY, D.; BENICHOU, A.

IEEE ELECTRON DEVICE LETTERS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Lugar: New York; Año: 2012 vol. 33 p. 637 - 639

0741-3106

In this letter, we report on the ink-jet full gridlinecells with three different Ag dosages (70, 90, and 130 mg)on 75-Ω/sq emitters. We observed that the open-circuit voltage(VOC), short-circuit current density (JSC), and fill factor ( FF)were highest for the 130-mg dose and decrease thereafter as the Agdosage decreases. Because of the decreased FF with decreasingAg dosage, the efficiency followed the same trend. However, wedemonstrated, for the first time, fully ink-jetted front Ag gridlineswith an FF of 0.765 and efficiency of 18.4% on 239-cm2 commercialCZ wafers with a sheet resistance of 75 Ω/sq. Noteworthy isthe achievement of 17.8% efficiency with only 70 mg of Ag, whichis ∼68% less Ag than that used on cells with screen-printed gridlines.This represents a Ag cost saving of∼$0.245 per 6-inch wafercompared to the screen-printed counterpart with 220 mg of Ag.