Capitalizing on the glass-etching effect of silver plating chemistry to contact si solar cells with homogeneous 100110 Ù/sq emitters

EBONG, A. , COOPER, I.B. , ROUNSAVILLE, B.C. , ROHATGI, A., DOVRAT, M. , KRITCHMAN, E. , BRUSILOVSKY, D. , BENICHOU, A.

IEEE ELECTRON DEVICE LETTERS

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Año: 2011 vol. 32 p. 779 - 781

0741-3106

Homogeneous high-sheet-resistance emitter (HHSE), excellent surface passivation, and high-quality contacts, along with narrow gridlines, are needed for high-efficiency solar cells. However, HHSE in conjunction with screen-printed (SP) contacts often gives low fill factor (FF) because of high contact resistance. We capitalized on the glass-etching property of light-induced plating of silver to decrease the contact resistance and formed high-quality contacts to 100–110 Ù/sq HHSE. This led to the achievement of 78.5% FF, 38.3 mA/cm2 short-circuit current density (JSC) due to narrow line widths (65 ìm), and efficiency of 18.7%. to narrow line widths (65 ìm), and efficiency of 18.7%. 78.5% FF, 38.3 mA/cm2 short-circuit current density (JSC) due to narrow line widths (65 ìm), and efficiency of 18.7%. to narrow line widths (65 ìm), and efficiency of 18.7%. Ù/sq HHSE. This led to the achievement of 78.5% FF, 38.3 mA/cm2 short-circuit current density (JSC) due to narrow line widths (65 ìm), and efficiency of 18.7%. to narrow line widths (65 ìm), and efficiency of 18.7%. 2 short-circuit current density (JSC) due to narrow line widths (65 ìm), and efficiency of 18.7%.ìm), and efficiency of 18.7%.