Experimental verification of thermal model for PCB mounted MOSFETs used on parallel H-bridge structures

MAESTRI, SEBASTIÁN O.; PITTET, SERGE; WASSINGER, NICOLAS; FUNES, MARCOS A.; GARCIA RETEGUI, ROGELIO; ANTOSZCZUK, PABLO

San Juan

Congreso; XIX Reunión de Trabajo en Procesamiento de la Información y Control; 2021

Instituto de Automática - UNSJ

The upgrade of the Large Hadron Collider (LHC) towards the High Luminosity-LHC (HL-LHC) presents different challenges, among them, the upgrade of the power converters associated to the inner triplet magnets to reach the required nominal current of 18 kA. In order to reach this current and to accomplish the stringent requirements associated to this kind of application, even under a fault scenario, redundancy and modularity are foreseen in the converter design. Consequently,the development of a 18 kA/±10 V power converter built from N parallel-connected sub-converters, each having M modules inside is carried out. In this work, the performance of the MOSFETsthat form each module is evaluated. In this sense, a thermal model for devices of HSOF packages is proposed and evaluated. The proposed model takes into consideration the PCB characteristicsand thermal interfaces that impact the heat dissipation through the board. Experimental results conducted with a 225 A H-bridge prototype validate the model.