On the origin of the low temperatures resistivity minimum in Cr thin films

E. OSQUIGUIL; L. TOSI; E. E. KAUL; C. BALSEIRO

JOURNAL OF APPLIED PHYSICS

AMER INST PHYSICS

Lugar: New York; Año: 2013 vol. 114 p. 2439021 - 2439027

0021-8979

We present measurements of the electrical resistivity and Hall coefficient, rho and RH, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in rho(T), which is thickness dependent. From 40K to 2 K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature Tmin where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture.