Effects of spin density wave quantization on the electrical transport in epitaxial Cr thin films

E. OSQUIGUIL; E. E. KAUL; L. TOSI; C. A. BALSEIRO

PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS

American Physical Society

Año: 2012 vol. 85 p. 1044101 - 1044105

0163-1829

We present measurements of the electrical resistivity ρ in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T . The ρ(T ) curves display hysteretic behavior in a certain temperature range, which is film thickness dependent. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. Our important finding is to experimentally show that the temperature Tmid where the ISDW changes from N to N + 1 nodes decreases as the film thickness increases. Identifying Tmid with a first-order transition between ISDWstates with N and N + 1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness L. The detailed dependence of Tmid(L) seems to depend rather strongly on the boundary conditions at the Cr film interfaces.