Quantum Chemical Study of C & H Location in an FCC Stacking Fault

ESTELA ANDREA GONZALEZ; SIMONETTI SANDRA,; MORO LILIÁN,; BRIZUELA GRACIELA,; JUAN ALFREDO,

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

PERGAMON-ELSEVIER SCIENCE LTD

Año: 2004 vol. 29 p. 649 - 658

0360-3199

 The H–C–Fe interaction has been investigated in  -Fe with a stacking fault using a cluster model. The energy of the system was calculated by the atom superposition and electron delocalization molecular orbital method. The electronic structure was studied using the concept of density of states and crystal orbital overlap population curves. By modifying the geometrical positions of the impurity within the cluster we have found that C occupies nearly octahedral sites on the stacking fault plane.The H does not reside in the vicinity of the C. The presence of C could reduce the detrimental e8ect of H on the Fe–Fe bonds.The present paper provides detailed energy mapping for C–Fe and H–C–Fe subsystems in the fault region. C–Fe and H–C equilibrium distances are reported and the orbital contributions to the bonding are also addressed.