Near-threshold properties of the electronic density of layered quantum-dots

ALEJANDRO FERRÓN; PABLO SERRA; OMAR OSENDA

PHYSICAL REVIEW B

AMER PHYSICAL SOC

Lugar: New York; Año: 2012 vol. 85 p. 165322 - 1653226

1098-0121

We present away tomanipulate an electron trapped in a layered quantum dot based on near-threshold propertiesof one-body potentials. First, we show that potentials with a simple global parameter allow the manipulation ofthe wave function, changing its spatial localization. This phenomenon seems to be fairly general and could beimplemented using current quantum-dot quantum-well technologies and materials if a proper layered quantumdot is designed. So, we propose a model layered quantum dot that consists of a spherical core surrounded bysuccessive layers of differentmaterials. The number of layers and the constituentmaterials are chosen to highlightthe near-threshold properties. The manipulation of the spatial localization of the electron in a layered quantumdot yields results consistent with actual experimental parameters