IFIBA 22255
INSTITUTO DE FISICA DE BUENOS AIRES
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Voltage induced asymmetry in the electrical response of symmetric memristive devices
Autor/es:
SANCHEZ, MARIA JOSE; RUBI, DIEGO; FERREYRA, CRISTIAN; ACHA, CARLOS; M. J. BENGIÓ
Lugar:
San Martin
Reunión:
Encuentro; XIX Encuentro sobre Superficies y Mat. nanoestructurados; 2019
Institución organizadora:
UNSAM
Resumen:
In this work we show that by appropriately choosing the electrical stimuli protocol insymmetric Pt / TaOx / Pt and Ag / La1/3Ca2/3MnO3 / Ag devices it is possible to selectivelyactivate or deactivate the RS behavior of each interface and tune the symmetry of thedevices memristive response. The voltage enhanced oxygen vacancies migration(VEOV) model was adapted to these systems [2,3] to reproduce and understand theexperimental data by modeling oxygen vacancies dynamics.
