IFIBA 22255
INSTITUTO DE FISICA DE BUENOS AIRES
Unidad Ejecutora - UE
artículos
Título:
ANOMALOUS TIME RELAXATION OF THE NONVOLATILE RESISTIVE STATE IN BIPOLAR RESISTIVE-SWITCHING OXIDE-BASED MEMORIES
Autor/es:
A. SCHULMAN, M.J. ROZENBERG Y C. ACHA
Revista:
PHYSICAL REVIEW B - CONDENSED MATTER AND MATERIALS PHYSICS
Editorial:
APS
Referencias:
Lugar: NY; Año: 2012 vol. 86 p. 104426 - 104429
ISSN:
0163-1829
Resumen:
We have studied long time relaxation effects on the nonvolatile
resistance state produced by resistive switching in devices composed by
ceramic YBa2Cu3O7−δ and La0.7Sr0.3MnO3/metal
(Au, Pt, Ag) interfaces. The time relaxation can be described by a
stretched exponential law that is characterized by a power exponent (n) close to 1/2. We found that the characteristic time (τ)
increases with increasing temperature and applied power. The origin of
the relaxation effect can be related to oxygen diffusion processes,
which were recently associated with the mechanism of bipolar switching
in complex oxide interfaces. We argue that the anomalous behavior can be
understood in terms of diffusion of oxygen ions (or oxygen vacancies)
on a two-dimensional surface with a temperature-dependent density of
trapping centers, which may correspond, physically, to the diffusion
along grain boundaries.
