Resonant Raman scattering background in XRF spectra of binary samples

MARÍA CECILIA VALENTINUZZI; HÉCTOR JORGE SÁNCHEZ; JUAN JOSÉ LEANI

Puebla

Congreso; XII Latin American Seminar of Analysis by X Ray Techniques; 2010

When atoms are irradiated with incident energy lower and close to an absorption edge, scattering peaks appear due to a process known as resonant Raman scattering. In this work we present theoretical calculations of the resonant Raman contribution to the background of X ray fluorescent spectra. The Shiraiwa and Fujino´s model was used to calculate characteristic intensities and scattering interactions. This model makes certain assumptions to achieve the calculations, especially in the case of geometrical conditions. The calculations show that the resonant Raman contribution is significant under the fluorescent peak, affects the symmetry of the peaks an, depending on the concentrations, overcomes the enhacement contributions.