IFEG   20353
INSTITUTO DE FISICA ENRIQUE GAVIOLA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Study of Ti/TiO2/electrolyte interfaces by SEM, AFM and electrochemical techniques
Autor/es:
FRANCISCO ANGEL FILIPPIN; FABIANA Y. OLIVA; AVALLE LUCIA BERNARDITA; ELISEO NARCISO DÍAZ; JORGE CARLOS TRINCAVELLI; MARTA EUGENIA ARIAS; FUENTES ANA SILVINA
Lugar:
Córdoba
Reunión:
Congreso; II Brazil-Argentine Microfluidics Congress/ V Congreso de Microfluídica Argentina; 2019
Resumen:
The intrinsic properties of TiO2 as work function, open circuit potential (ocp), and donor concentration (Nd), are related to both the thickness of the deposited oxide (formed by different techniques) and the thickness of the native oxide (the oxide that growths spontaneously at room temperature) (1). Anodic titanium oxide films were potentiodinamically grown on Ti foil and glass/Ti in 0.010 M HClO4 at 50 mV s-1. The current density-potential curves (j-E) showed that the oxide grows according to the physical model for high-field conduction (2), when the positive limit of potential (Ef)is not higher than 2.5 V vs. SCE.The titanium oxide / electrolyte interface was examined to determine the changes observed in electrode surface roughness as a function of electrolyte nature and temperature. The same samples were analyzed by Scanning Electron (SEM) and Atomic Force microscopies (AFM). The SEM images were acquired with a Carl Zeiss Sigma before and after anodic oxide formation (LAMARX), and AFM images were acquired with a commercial NanosurfSystem (Lab. Microscopı́a Catamarca) operating in tapping mode at atmospheric pressure and room temperature. The results obtained by the electrochemical and the two microscopic methods were in good correlation.1- Surface area of Ti/TiO2-Pt electrodes determined by Cyclic Voltametry.F.A. Filippin, E. Santos, L.B. Avalle.RevistaMateria (Rio de Janeiro) 23, 2 (2018) ISSN 1517-7076.2- M. Dignam, J.OM. Bockris, in: B.E. Conway, E. Yeager, R.E. White (Eds.), Comprehensive Treatise of Electrochemistry, vol.4, Plenum Press, New York, 1981, p. 247.