Pressure effects on the SiC synthesis temperature

SIFRE D.; GASBARINO G.; GALVÁN JOSA V.; MEZOUAR M.; LIMANDRI S.

Val Cenis-Lanslebourg

Encuentro; ESRF Science and Students days 2017; 2017

ESRF

SiC is a candidate material to make up the interior of carbon-rich exoplanets. Understanding the structure of these planets depends on our knowledge of the pressure behaviour of the SiC synthesis mechanisms. SiC has also diverse industrial applications. It has exclusive properties such as high hardness and strength, chemical and thermal stability, high melting point, oxidation resistance, etc. Mineral SiC (mossainite), in its natural form is extremely rare, so all the applications of SiC today use synthetic material. Obtaining bulk SiC pieces at ambient pressure involve high temperatures (1800-2500K).We present a new study of the Si+C->SiC synthesis temperature for pressures ranging from 0.5-10 GPa.