Comparison Between Atomic and Nuclear Techniques in Depth Profiling Thin Implanted Layers in Silicon Wafers

M. KOKKORIS; M. ERICH; A. MIGLIORI; E. ANDROULAKAKI; M. CZYZYCKI; A. KARYDAS; JUAN JOSÉ LEANI

Shangai

Conferencia; International Conference on Ion Beam Analysis; 2017

University of Fudan

Synchrotron-radiation based techniques have been recently emerged as serious competitors of traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. For this reason, the main goal of the present work is the comparison between GIXRF (Grazing Incidence X-Ray Fluorescence) and RBS/EBS techniques with respect to the accurate quantitative determination of the depth profile concentrations of medium- and high-Z ions, implanted in the random direction in Si wafers.The targets used were Ar- and Kr-implanted in Si [111] polished crystalline wafers at several different doses. The implantations took place at the FAMA facility in Vinça, Belgrade, implementing 200 keV Ar and 170 keV Kr ions. The ion species were carefully chosen as to provide sufficient challenges for both atomic and nuclear techniques. The RBS/EBS measurements were carried out at NCSR ?Demokritos? using low-energy (~1.3-1.5 MeV) protons and deuterons, while GIXRF measurements were carried out at the IAEA end-station facility ?at the XRF beamline of Elettra Sincrotrone Trieste, with an angular step ranging from 0.01o to 0.05o, between 0o and ~6-10o beam incidence, depending on the sample. The results are compared to already existing onesin literature and an attempt is made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.