Potential-induced conformational changes in alfa-CN-terthiophene thiolate film on GaAs(110)

V. LAZARESCU*, R. SCURTU, A. TOADER C. LOGOFATU, M.F. LAZARESCU, E. VOLANSCHI, E. SANTOS, G. GOETZ, H. JONES, W. SCHMICKLER

Sevilla, Espana

Congreso; The 59th Annual Meeting of the International Society of Electrochemistry; 2008

<!-- /* Style Definitions */ p.MsoNormal, li.MsoNormal, div.MsoNormal {mso-style-update:auto; mso-style-parent:""; margin-top:12.0pt; margin-right:0cm; margin-bottom:12.0pt; margin-left:0cm; text-align:justify; mso-pagination:widow-orphan; font-size:12.0pt; mso-bidi-font-size:10.0pt; font-family:Arial; mso-fareast-font-family:"Times New Roman"; mso-bidi-font-family:"Times New Roman"; mso-ansi-language:FR; mso-fareast-language:EN-US;} @page Section1 {size:612.0pt 792.0pt; margin:70.85pt 70.85pt 2.0cm 70.85pt; mso-header-margin:36.0pt; mso-footer-margin:36.0pt; mso-paper-source:0;} div.Section1 {page:Section1;} --> SHG investigations on a-CN-terthiophene-thiolates-covered GaAs(110) electrodes in 1N H2SO4 solution revealed a pronounced increase in the SH-isotropic parameter App110 around -0.2 V(SCE) accompanied by significant changes in the rotational anisotropy of the SH response. The analysis of the EIS data showed that in the potential region where the isotropic field parameter App110 exhibits a peak, the Mott-Schottky plot undergoes a pronounced shift to more negative potentials, due to the charging of the surface states grouped at about 1.06 eV below the conduction band edge.