Formation of epitaxial beta-Sn islands at the interface of SiO2 /Si layers implanted with Sn ions

J. M. J. LOPES; F. C. ZAWISLAK; P. F. P. FICHTNER; R. M. PAPALÉO; F. C. LOVEY; A. M. CONDÓ; A. J. TOLLEY

APPLIED PHYSICS LETTERS

AMER INST PHYSICS

Año: 2005 vol. 86 p. 1919141 - 1919143

0003-6951

180 nm SiO2 layers on Si (100) were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature (900-1100 °C) annealing, an array of b-Sn islands epitaxially attached to the Si was observed at the SiO2/Si (100) interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2 /Si interface and the appearance of the island system is discussed in terms of the Sn-Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.