INVESTIGADORES
RENTERIA Mario
congresos y reuniones científicas
Título:
Hyperfine Interactions of Sc Impurities in Sapphire
Autor/es:
DARRIBA G.N.; RENTERÍA M.
Lugar:
Canberra
Reunión:
Congreso; HFI/NQI2014, 5th Joint Meeting of the 17th International Conference on Hyperfine Interactions & 21th International Symposium on Nuclear Quadrupole Interaction; 2014
Institución organizadora:
HFI/NQI Executive Committee
Resumen:
In this work we present a theoretical study
of structural, electronic, and hyperfine properties of a-Al2O3 semiconductor
doped with Sc impurities using ab initio Density
Functional Theory calculations. In recent years, we have performed similar
studies in a-Al2O3 using acceptor or donor
impurities, such as Cd and Ta atoms, respectively [1, 2]. These ab initio calculations were compared
with Time-Differential γ-γ Perturbed Angular Correlation (PAC) experiments
using (111In→)111Cd and (181Hf→)181Ta
nuclides as PAC probes. On the other
hand, 44Sc can be used as a non-standard PAC probe using the 44Ti→44Sc
decay. In this way, it is interesting to obtain a reliable structural,
electronic, and hyperfine theoretical characterization of Sc-doped a-Al2O3
that could be compared with experimental results of 44Sc PAC
experiments, now in progress. The ab initio calculations were performed
with the Full-Potential Augmented Plane Wave plus Local Orbitals (FP-APW+lo)
method using the Wien2K code. We studied different Sc concentrations in order
to simulate the isolated impurity condition 44Sc has in PAC
experiments. Sc is an isovalent impurity when it replaces the Al atom,
nevertheless we performed calculations for different charge states of the
impurity. We demonstrate that no magnetic interaction is present at Sc site and
therefore a pure quadrupole hyperfine interaction is predicted. The electronic
structures and the electric-field gradient are also compared with those
obtained for acceptor and donor impurities in a-Al2O3.