Low Noise Design of a CMOS Gilbert Mixer Cell in 700 MHz

G. BARRAZA; F. GREGORIO; J. E. COUSSEAU

Cordoba

Congreso; XVI Reunión de Trabajo en Procesamiento de la Información y Control; 2015

A design of a MOS Gilbert mixer cell intendedfor LTE band 28 is presented in this work. The objectiveis directed to a design with low noise and low third-orderintermodulation distortion. The designed mixer can be used in afully-differential chain, avoiding the implementation of a balun.Since the overall IP3 of a full front-end depends on the IP3 of theeach stage, specially those behind the low-noise amplifier (LNA),it is mandatory to have a properly designed mixer. In this designa CMOS 0.18 μm process is employed. The proposed schemeallows to obtain the following characteristic parameters: an IIP3of 8.69 dBm, a 1dB-compression point of -1.28 dBm, a noisefigure of 8.2 dB and draw 30 mA from a 3.3 V power supply.