INVESTIGADORES
COUSSEAU Juan Edmundo
congresos y reuniones científicas
Título:
A comparative Study on Best Suited Transistor Technologies for High Linearity RF Power Amplifiers in WiMAX Base Station Applications.
Autor/es:
M. BRUNO; J. E. COUSSEAU; P. D. DOÑATE
Lugar:
Rio Gallegos
Reunión:
Congreso; XII Reunión de Procesamiento de la Información y Control; 2007
Institución organizadora:
RPIC
Resumen:
This paper presents a comparativestudy of two transistors technologies suitable for RadioFrequency Power Amplifier (RFPA) in 2.4 GHzWiMAX operation band, Lateral Diffused Metal OxideSemiconductor (LDMOS) and High Electron MobilityTransistor (HEMT). Two designs were realizedin order to compare the Inter Modulation Distortion(IMD) and Memory Effects (ME) at the amplifier output.The purpose of this work is to find which technologypresents lower IMD and ME at specified poweroutput with similar matching conditions. The measuredresults will be used in a future study of digitalpredistorter designs with memory effects correction.
