Characterization of graphene grown by direct-liquid-injection chemical vapor deposition with cyclohexane precursor in N2 ambient

INTARO, T.; BOTTA, R.; KOSUGA, S.; TAYCHATANAPAT, T.; SUWANYANGYAUN, P.; NIKI, M.; KOH, S.; HODAK, J.; NUNTAWONG, N.; WATANABE, T.; SANORPIM, S.

DIAMOND AND RELATED MATERIALS

ELSEVIER SCIENCE SA

Año: 2020 vol. 104 p. 1 - 10

0925-9635

We synthesize graphene films by direct-liquid-injection chemical vapor deposition (DLI-CVD) method with cyclohexane precursor (C6H12) in N2 ambient. This process offers a safer, and more economical route for large-scale graphene production in which hydrogen gas is not required. Graphene films are grown on Cu foil substrates at 890 to 980 °C for 10 min in the total pressure of 2 mbar. The flow rate of cyclohexane is varied between 0.2 and 0.5 g/min. The Raman results shows continuous monolayer graphene films at growth temperature of 950 °C and a flow rate of 0.5 g/min. Hall and field-effect measurements show mobilities in the range of 450?800 cm2/V·s. The relatively low D peak intensity suggests that carrier mobility is likely limited by impurities introduced to the devices during transfer process and device fabrication.