INTEMA   05428
INSTITUTO DE INVESTIGACIONES EN CIENCIA Y TECNOLOGIA DE MATERIALES
Unidad Ejecutora - UE
artículos
Título:
Hillock sizes after wet etching in silicon
Autor/es:
D.A. MIRABELLA, M.P. SUÁREZ, C.M. ALDAO
Revista:
SURFACE SCIENCE
Editorial:
ELSEVIER SCIENCE BV
Referencias:
Año: 2009 vol. 603 p. 3346 - 3349
ISSN:
0039-6028
Resumen:
The formation of two- and three-dimensional hillocks is regularly observed in Si(1 1 1) steps and Si(1 0 0)
during wet etching. Frequently the resulting morphology consists of hillocks scattered on a landscape of
limited roughness. Recently we proposed a mean field model (MFM) in which the observed hillock-andvalley
pattern is possible under steady state if hillock etching is slightly faster than valley etching. This
condition implies that hillock size distributions must be an exponential decreasing function. In this work,
we report a systematic study of hillock size distributions of experimental morphologies obtained under
different etchant concentrations in Si(1 0 0). We found that experimental hillock size distributions are in
agreement with those predicted by the MFM.