Carbon Nanotube Integration with a CMOS Process

M. S. PÉREZ; B. LERNER; DANIEL E. RESASCO; P. D. PAREJA OBREGÓN; P. M. JULIÁN; P. S. MANDOLESI; F. A. BUFFA; A. BOSELLI; A. LAMAGNA

SENSORS

MOLECULAR DIVERSITY PRESERVATION INTERNATIONAL-MDPI

Año: 2010 p. 3857 - 3867

1424-8220

This work shows the integration of a sensor based on carbon nanotubes usingCMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 mCMOS process, leaving a free window on the passivation layer that allowed the depositionof SWCNTs over the electrodes. We successfully investigated with the CS the effect ofhumidity and temperature on the electrical transport properties of SWCNTs. The possibilityof a large scale integration of SWCNTs with CMOS process opens a new route in the designof more efficient, low cost sensors with high reproducibility in their manufacture.