FABRICATION OF PZT THIN FILMS MODIFIED BY THE INCORPORATION OF COPPER OXIDE NANOPARTICLES FOR PHOTOVOLTAIC APPLICATIONS

MARÍA VIRGINIA ROLDÁN; MARCELO STACHIOTTI; MARÍA BELÉN DI MARCO

Darmstadt (virtual)

Conferencia; XVII Electroceramics Conference; 2020

Technische Universität Darmstadt and European Ceramic Society

Recent studies have shown a high enhancement in short circuit photocurrent density and power conversion efficiency in PZT/copper oxide multilayer film structures, providing an efficient approach to develop photovoltaic devices based on ferroelectric films [1]. In the present work we develop a strategy for the incorporation of cuprous oxide (Cu2O) nanoparticles into a PbZr0.52Ti0.48O3 (PZT) thin film matrix. The Cu2O nanoparticles were synthesized by a colloidal chemistry approach, using ascorbic acid as reducing agent and PVP as surfactant. Cubic-shaped nanoparticles with an edge length of ∼90nm were obtained (see figure). A band gap of ∼2.5eV was determined from optical measurements. Nanoparticle-embedded PZT thin films were fabricated by a chemical solution deposition method, using acetoin as a chelating agent. The Cu2O nanoparticles were successfully incorporated into the PZT matrix by the spin coating deposition of a colloidal suspension between PZT layers of ∼80 nm thickness. Uniform and dense films were successfully fabricated on Pt substrates. The XRD analysis showed a single-phase perovskite structure. The samples exhibited good dielectric properties and well-saturated ferroelectric hysteresis loops at 50 Hz. We showed that the ferroelectric properties of 3-layer PZT thin films remain practically unaffected by the incorporation of the 90nm cuboid Cu2O nanoparticles. Photocurrent measurements are currently in process.[1] J. Song et. al., Journal of Sol-Gel Science and Technology (2018) 87:285?291