Influence of Tungsten Doping on the Ferroelectric Behavior of Sr0.8Bi2.3Ta2O9 Thin Films,

M.L.SANTIAGO; R. MACHADO; M.G.STACHIOTTI; O DE SANCTIS

Xi'an, China

Congreso; The joint meeting of 12th International Meeting on Ferroelectricity and 18th IEEE International Symposium on Applications of Ferroelectrics,; 2009

<!-- @page { margin: 2cm } P { margin-bottom: 0.21cm } --> The substitution effect of W+6 at Ta+5 site on the structural, dielectric and ferroelectric properties of Bi-rich Sr0.8Bi2.3Ta2O9 (SBT) thin films is reported. Samples of compositions Sr0.8-x/2Bi2.3Ta2-xWxO9 (SBTW) with x ranging from 0.0 to 0.2 were synthesized by a chemical solution deposition technique using non-hydrolyzing precursors. The microstructure and ferroelectricity of SBTW films as functions of dopant concentration and annealing temperature were studied. Well-defined hysteresis loops were obtained for the doped films annealed between 650 Co and 750Co. The ferroelectric properties, however, were not improved compared to those of undoped SBT films due to the appearance of a non-ferroelectric secondary phase.