EVOLUTION OF GAM, GOS AND GND MAGNITUDES OBTAINED BY EBSD DURING RECRYSTALLIZATION AND ARB PROCESSES

F. CRUZ GANDARILLA; A. SALCEDO GARRIDO; H. MENDOZA LEON; M. AVALOS; R. BOLMARO

Cancún

Congreso; XXV International Materials Research Congress; 2016

IMRS

The differences between metallurgical processes influence dislocation storage characteristics, like their spatial and orientation distributions and subsequent microstructural development [1,2]. In the particular case of Electron BackScatter Diffraction (EBSD) technique, a few magnitudes can be used for the characterization of those microstructural features, to wit: texture, grain sizes, grain boundary character, density of geometrically necessary dislocations (GND), grain orientation spread (GOS), grain average misorientation (GAM), etc. [3-5].We used that technique for studying particularities and general development rules on different processes-systems we investigated: i) primary recrystallization on Fe3%Si steel, after cold deformation to 65% reduction; ii) five cycles of Accumulative Roll Bonding (ARB) on Interstitial Free (IF) steel.In the case of the Fe3%Si we found that GOS varies from 6o to 2o for the first stage (recover and beginning of recrystallization) before growing up to 3o where stabilization occurs. For the case of the ARB processed IF, we find that GOS, GAM and GND vary consistently, increasing for the first three cycles of ARB and decreasing in the late ones. GOS is the most sensitive parameter changing along the cycles.For both the main characteristic is a decrease in the density of dislocations and their cell forming rearrangement producing cells or sub-grains, but with different boundary characters.