Chamber for in-situ synchotron radiation studies of thin films grown by reactive magnetron sputtering

BÜRGI J.M.; NEUENSCHWANDER R.; GARCÍA MOLLEJA J.; CRAIEVICH A.F.; KELLERMAN G.; JOUAN P.-Y.; GÓMEZ B.; FEUGEAS J.

Campinas (São Paulo)

Congreso; XXI International Congress on X-ray Optics and Microanalysis; 2011

Laboratório Nacional de Luz Síncrotron

Reactive magnetron sputtering is a technique often applied to thin films deposition. The composition and structure of the final films depend on a number of physical and geometrical parameters selected for the process. All these parameters are a priori defined, and normally maintained during the whole process. The features of the resulting films (crystalline and/or amorphous structure, distribution of stress across the film, texture, physical properties, etc.) depend on the specific parameters selected for the particular deposition process. The structure can vary during film development, this variation not necessarily being reflected on the profile cross section of the film in its final state. This often occurs because the new developed layers can induce structural modifications to the preceding ones. For this reason it is worth to study the kinetic of film growth – by using for example in-situ X-ray scattering techniques - along the whole deposition process.