Photogating Effect observed in Nanocrystalline Silicon Solar Cells

H.LI; R.E.I.SCHROPP; F.A.RUBINELLI

Utrecht, Paises Bajos

Conferencia; 23th International Conference on Amorphous and Nanocrystalline Semiconductors; 2009

Utrecht University

The photogating effect is observed for the first time in ìc-Si:H thin film solar cells. Computer simulations point out this is due to electric field modulation in the i-layerof the solar cell, where the field is weakened by the strong blue bias light. •High defect density and low internal electric field are the mainrequirements for observing the photogating effect. This knowledge has helped us to improve the efficiency of nc-Si:H n-i-pcells with an i-layer made by Hot-Wire CVD.