The Surface and Bulk Band Structure of Layered In4Se3

JING LIU; YA. B. LOSOVYJ; T. KOMESU; P. A. DOWBEN; L. MAKINISTIAN; E. A. ALBANESI; ANDRE PETUKHOV; P. GALIY; YA. FIYALA

Lincoln, Nebraska, USA

Conferencia; 54th Midwest Solid State Conference; 2007

The band structure of the layered In4Se3 system was studied by angle-resolved photoemission (ARPES). Both bulk and surface features were identified through photon energy dependent ARPES. The surface state dispersions were measured in G-X and G-Y directions. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-pand Se-p weighted bands within the valence region with changing photon energy, and is indicative of a bulk band structure perpendicular to the cleavage plane. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure. The cleavage surfaces are ordered with the critical points consistent with LEED.