INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
Porous Silicon, Optical, Structural and Transport Properties. Lecture 2: Radiation induced effects in Nanostructured Porous SIlicon
Autor/es:
R.R. KOROPECKI
Lugar:
Corrientes
Reunión:
Exposición; Inter-Continental Advanced Materials for Photonics Summer/Winter School I-Camp 2011,; 2011
Institución organizadora:
I-CAMP
Resumen:
Effects of photon and electron beam irradiation on porous silicon produce changes in some properties. These kinetics of these changes are discussed in terms of a model considering Short Lived Large Energy Fluctuations (SLEFs) occurring during the bimolecular recombination of electron-hole pairs generated during the irradiation.
