INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
congresos y reuniones científicas
Título:
DISORDER INDUCED RAMAN SCATTERING OF PLASMONS IN HEAVILY DOPED BULK AND POROUS SILICON
Autor/es:
Y. A. PUSEP; A. D. RODRIGUES; R.D. ARCE; R.R. KOROPECKI; L. N. ACQUAROLI; R. URTEAGA; D. COMEDI
Reunión:
Conferencia; Porous Semiconductors Science and Technology 2010; 2010
Resumen:
Localized plasmon-LO phonon coupled modes were observed in heavily doped bulk and porous silicon due to the disorder induced relaxation of the quasi-momentum. Effects of the confinement caused the damping of the coupled modes significantly decreasing in the porous structure. In the samples with high porosity a modification of the porous structure resulting in a weaker confinement of the coupled modes was found.
