Numerical Simulations of III-V solar cells using D-AMPS

M.BARRERA, F.A. RUBINELLI, J.PLÁ Y I.REY-STOLLE

Valencia

Conferencia; 25th European Solar Energy Conference; 2010

AIM Group Baltic UAB, Kestucio 59/27, LT-08124, Vilnius, Lithuania

Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. Here, we present results obtained using the code D-AMPS-1D, that was conveniently modified to consider the particularities of III-V solar cell devices. This work, that is a continuation of a previous paper regarding solar cells for space applications, is focused on solar cells structures than find application for terrestrial use under concentrated solar illumination. The devices were fabricated at the Solar Energy Institute of the Technical University of Madrid (UPM). The first simulations results on InGaP cells are presented. The influence of band offsets and band bending at the window-emitter interface on the quantum efficiency was studied. A remarkable match of the experimental quantum efficiency was obtained. Finally, numerical simulation of single junction n-p InGaP-Ge solar cells was performed. Keywords: III-V semiconductors, simulation, solar cell, concentration