INTEC 05402
INSTITUTO DE DESARROLLO TECNOLOGICO PARA LA INDUSTRIA QUIMICA
Unidad Ejecutora - UE
artículos
Título:
Fano resonance in heavily doped porous silicon
Autor/es:
Y.A. PUSEP; A.D. RODRIGUES; L.J. BORRERO GONZÁLEZ; L.N. ACQUAROLI; R. URTEAGA; R D ARCE; R.R. KOROPECKI; M.TIRADO; D. COMEDI
Revista:
JOURNAL OF RAMAN SPECTROSCOPY
Editorial:
JOHN WILEY & SONS LTD
Referencias:
Año: 2011 vol. 42 p. 1405 - 1407
ISSN:
0377-0486
Resumen:
Unexpectedly, the Fano resonance caused by the interference of continuum electron excitations with the longitudinal optical (LO) phonons was observed in random porous Si by Raman scattering. The analysis of the experimental data shows that the electron states trapped at the Si?SiO2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined. the interface states was determined. the interface states was determined. 2 interface dominate in the observed Raman scattering. The gap energy associated with the interface states was determined.
