Computational Analysis of Dark Current in Proton Irradiated PIN Photodiodes

M.A.CAPPELLETTI; A.P.CEDOLA; E.L.PELTZER Y BLANCA

University of Massachusetts-Amherst

Workshop; International Workshop of Computational Electronics (IWCE-12); 2007

University of Massachusetts-Amherst

Space radiation environment degrade on board electronic devices and systems. Incident electrons, protons, neutrons, heavy ions and more, damage semiconductor structure accelerating the aging of electronic components, process that can lead to mission permanent failures in worst case [1]. Two types of damage affect electronic devices exposed to radiation: ionization and atomic displacement damage [2]. Present work is focused on study of displacement damage effects on silicon PIN photodiodes irradiated with 10 MeV protons, by mean of numerical simulations.